NTMFS7D8N10GTWG

onsemi

NTMFS7D8N10GTWG

Datasheet

Analog & Power

N-CHANNEL SHIELDED GATE POWERTRE

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.6mOhm @ 48A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6180 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 254µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 110A (Tc)
Max Power Dissipation3W (Ta), 187W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)