NTMFS6H858NT1G

onsemi

NTMFS6H858NT1G

Analog & Power

TRENCH 8 80V NFET

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20.7mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 30µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta)
Max Power Dissipation3.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)