NTMFS4C09NAT1G

onsemi

NTMFS4C09NAT1G

Datasheet

Analog & Power

MOSFET N-CH 30V 9A/52A 5DFN

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.8mOhm @ 30A, 10V
Base Product NumberNTMFS4
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1252 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 52A (Tc)
Max Power Dissipation760mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)

Environmental

Operating Temperature-55°C~150°C(TJ)