NTMFS4833NST3G

onsemi

NTMFS4833NST3G

Datasheet

Analog & Power

MOSFET N-CH 30V 16A/156A SO-8FL

Obsolete8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs86 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds5250 pF @ 12 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSENSEFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 156A (Tc)
Max Power Dissipation900mW (Ta), 86.2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackageSO-8FL

Environmental

Operating Temperature-55°C ~ 150°C (TJ)