NTMFS0D8N02P1ET1G

onsemi

NTMFS0D8N02P1ET1G

Datasheet

Analog & Power

MOSFET N-CH 25V 55A/365A 5DFN

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.68mOhm @ 46A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds8600 pF @ 13 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+16V, -12V
Vgs(th) (Max) @ Id2V @ 2mA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C55A (Ta), 365A (Tc)
Max Power Dissipation3.2W (Ta), 139W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)

Environmental

Operating Temperature-55°C~150°C(TJ)