NTMFS005P03P8ZT1G

onsemi

NTMFS005P03P8ZT1G

Datasheet

Analog & Power

MOSFET P-CH

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7mOhm @ 22A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7880 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C15.3A (Ta), 164A (Tc)
Max Power Dissipation900mW (Ta), 104W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)