NTMFD0D9N02P1E

onsemi

NTMFD0D9N02P1E

Analog & Power

MOSFET 2N-CH 30V/25V 14A 8PQFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Base Product NumberNTMFD0D9
Configuration2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V, 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 15V, 5050pF @ 13V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 340µA, 2V @ 1mA

Electrical

Drain-to-Source Voltage30V, 25V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 30A (Ta)
Power - Max960mW (Ta), 1.04W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)