NTMD6N03R2

onsemi

NTMD6N03R2

Datasheet

Analog & Power

MOSFET 2N-CH 30V 6A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Base Product NumberNTMD6
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 24V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6A
Power - Max1.29W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)