NTMD4N03R2G

onsemi

NTMD4N03R2G

Datasheet

Analog & Power

MOSFET 2N-CH 30V 4A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 4A, 10V
Base Product NumberNTMD4
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 20V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4A
Power - Max2W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)