NTLUS4930NTAG

onsemi

NTLUS4930NTAG

Datasheet

Analog & Power

MOSFET N-CH 30V 3.8A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28.5mOhm @ 6.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds476 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Max Power Dissipation650mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-UDFN (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)