NTLUS4195PZTBG

onsemi

NTLUS4195PZTBG

Datasheet

Analog & Power

MOSFET P-CH 30V 2A 6UDFN

Obsolete6-PowerUFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Max Power Dissipation600mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-PowerUFDFN
Supplier Device Package6-UDFN (1.6x1.6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)