NTLJS3D9N03CTAG

onsemi

NTLJS3D9N03CTAG

Datasheet

Analog & Power

MOSFET N-CH 30V 10.3A 6PQFN

Obsolete6-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.9mOhm @ 10A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1565 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.3A (Ta)
Max Power Dissipation860mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-PowerWDFN
Supplier Device Package6-PQFN (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)