NTLJS3A18PZTWG

onsemi

NTLJS3A18PZTWG

Analog & Power

MOSFET P-CH 20V 5A 6WDFN

Obsolete6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 7A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2240 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)