NTLJS1102PTAG

onsemi

NTLJS1102PTAG

Datasheet

Analog & Power

MOSFET P-CH 8V 3.7A 6WDFN

Obsolete6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs36mOhm @ 6.2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1585 pF @ 4 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesµCool™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id720mV @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)