NTLJD4150PTBG

onsemi

NTLJD4150PTBG

Datasheet

Analog & Power

MOSFET 2P-CH 30V 1.8A 6WDFN

Obsolete6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs135mOhm @ 4A, 10V
Base Product NumberNTLJD41
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C1.8A
Power - Max700mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)