NTLJD4116NT1G

onsemi

NTLJD4116NT1G

Datasheet

Analog & Power

MOSFET 2N-CH 30V 2.5A 6WDFN

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 2A, 4.5V
Base Product NumberNTLJD41
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds427pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2.5A
Power - Max710mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)