NTLJD3119CTAG

onsemi

NTLJD3119CTAG

Datasheet

Analog & Power

MOSFET N/P-CH 20V 2.6A 6WDFN

Obsolete6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 3.8A, 4.5V
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds271pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesµCool™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.6A, 2.3A
Power - Max710mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)