NTLGF3501NT2G

onsemi

NTLGF3501NT2G

Analog & Power

MOSFET N-CH 20V 2.8A 6DFN

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 3.4A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesFETKY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Max Power Dissipation1.14W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-DFN (3x3)

Environmental

Operating Temperature-55°C~150°C(TJ)