NTJS4160NT1G

onsemi

NTJS4160NT1G

Datasheet

Analog & Power

MOSFET N-CH 30V 1.8A SC88/SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 2.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Max Power Dissipation300mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

Environmental

Operating Temperature-55°C~150°C(TJ)