NTHS5441PT1G

onsemi

NTHS5441PT1G

Datasheet

Analog & Power

MOSFET P-CH 20V 3.9A CHIPFET

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs46mOhm @ 3.9A, 4.5V
Base Product NumberNTHS54
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 5 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™

Environmental

Operating Temperature-55°C~150°C(TJ)