NTHS4111PT1G

onsemi

NTHS4111PT1G

Analog & Power

MOSFET P-CH 30V 3.3A CHIPFET

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 4.4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 24 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)