NTHS2101PT1

onsemi

NTHS2101PT1

Datasheet

Analog & Power

MOSFET P-CH 8V 5.4A CHIPFET

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 5.4A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 6.4 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.4A (Tj)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™