NTHL099N60S5

onsemi

NTHL099N60S5

Datasheet

Analog & Power

NTHL099N60S5

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs99mOhm @ 13.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 400 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesSuperFET® V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 2.8mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Max Power Dissipation184W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)