NTHD2102PT1

onsemi

NTHD2102PT1

Datasheet

Analog & Power

MOSFET 2P-CH 8V 3.4A CHIPFET

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs58mOhm @ 3.4A, 4.5V
Base Product NumberNTHD21
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds715pF @ 6.4V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage8V
Current - Continuous Drain (Id) @ 25°C3.4A
Power - Max1.1W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)