NTHC5513T1G

onsemi

NTHC5513T1G

Datasheet

Analog & Power

MOSFET N/P-CH 20V 2.9A CHIPFET

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Base Product NumberNTHC5513
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.2A
Power - Max1.1W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)