NTH4LN040N65S3H

onsemi

NTH4LN040N65S3H

Datasheet

Analog & Power

NTH4LN040N65S3H

DiscontinuedTO-247-4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 31A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6513 pF @ 400 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 6.8mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Max Power Dissipation379W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-4
Supplier Device PackageTO-247-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)