NTGD4167CT1G

onsemi

NTGD4167CT1G

Datasheet

Analog & Power

MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 2.6A, 4.5V
Base Product NumberNTGD4167
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds295pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2.6A, 1.9A
Power - Max900mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)