NTGD3148NT1G

onsemi

NTGD3148NT1G

Datasheet

Analog & Power

MOSFET 2N-CH 20V 3A 6TSOP

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 3.5A, 4.5V
Base Product NumberNTGD3148
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max900mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-50°C ~ 150°C (TJ)