NTE4151PT1G

onsemi

NTE4151PT1G

Datasheet

Analog & Power

MOSFET P-CH 20V 760MA SC89-3

ActiveSC-89, SOT-490Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs360mOhm @ 350mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds156 pF @ 5 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C760mA (Tj)
Max Power Dissipation313mW (Tj)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89-3

Environmental

Operating Temperature-55°C~150°C(TJ)