NTD80N02

onsemi

NTD80N02

Datasheet

Analog & Power

MOSFET N-CH 24V 80A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.8mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage24 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature-55°C~150°C(TJ)