NTD4965NT4G

onsemi

NTD4965NT4G

Datasheet

Analog & Power

MOSFET N-CH 30V 13A/68A DPAK-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.7mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 68A (Tc)
Max Power Dissipation1.39W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)