NTD4860NA-1G

onsemi

NTD4860NA-1G

Datasheet

Analog & Power

MOSFET N-CH 25V 10.4A/65A IPAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 30A, 10V
Base Product NumberNTD48
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1308 pF @ 12 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Current - Continuous Drain (Id) @ 25°C10.4A (Ta), 65A (Tc)
Max Power Dissipation1.28W (Ta), 50W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)