NTD4809NA-35G

onsemi

NTD4809NA-35G

Analog & Power

MOSFET N-CH 30V 9.6A/58A IPAK

ObsoleteTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1456 pF @ 12 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 58A (Tc)
Max Power Dissipation1.3W (Ta), 52W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageI-Pak

Environmental

Operating Temperature-55°C ~ 175°C (TJ)