NTD3817N-1G

onsemi

NTD3817N-1G

Datasheet

Analog & Power

MOSFET N-CH 16V 7.6A/34.5A IPAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.9mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds702 pF @ 12 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage16 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta), 34.5A (Tc)
Max Power Dissipation1.2W (Ta), 25.9W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C~175°C(TJ)