NTD360N80S3Z

onsemi

NTD360N80S3Z

Datasheet

Analog & Power

MOSFET N-CH 800V 13A DPAK

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs360mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1143 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 300µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Max Power Dissipation96W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252)

Environmental

Operating Temperature-55°C~150°C(TJ)