NTD3055L170-001

onsemi

NTD3055L170-001

Datasheet

Analog & Power

MOSFET N-CH 60V 9A IPAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 4.5A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation1.5W (Ta), 28.5W (Tj)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C~175°C(TJ)