NTD250N65S3H

onsemi

NTD250N65S3H

Datasheet

Analog & Power

POWER MOSFET, N-CHANNEL, SUPERFE

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs250mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1261 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 1.1mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Max Power Dissipation106W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252)

Environmental

Operating Temperature-55°C~150°C(TJ)