NTBL050N65S3H

onsemi

NTBL050N65S3H

Datasheet

Analog & Power

MOSFET - POWER,NCHANNEL, SUPERFE

Discontinued8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 24.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4880 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 4.8mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Max Power Dissipation305W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device Package8-HPSOF

Environmental

Operating Temperature-55°C ~ 150°C (TJ)