NTBGS1D5N06C

onsemi

NTBGS1D5N06C

Datasheet

Analog & Power

POWER MOSFET, 60 V, 1.62 M?, 267

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.55mOhm @ 64A, 12V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6250 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 318µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 267A (Tc)
Max Power Dissipation3.7W (Ta), 211W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageD2PAK (TO-263)

Environmental

Operating Temperature-55°C~175°C(TJ)