NTBGS004N10G

onsemi

NTBGS004N10G

Datasheet

Analog & Power

POWER MOSFET 203 AMPS, 100 VOLTS

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.1mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12100 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 500µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 203A (Tc)
Max Power Dissipation3.7W (Ta), 340W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageD2PAK (TO-263)

Environmental

Operating Temperature-55°C~175°C(TJ)