NTBGS002N06C

onsemi

NTBGS002N06C

Datasheet

Analog & Power

POWER MOSFET, 60 V, 2.2 M?, 211

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.1mOhm @ 45A, 12V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4620 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 225µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 211A (Tc)
Max Power Dissipation3.7W (Ta), 178W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)