NTB5605PG

onsemi

NTB5605PG

Datasheet

Analog & Power

MOSFET P-CH 60V 18.5A D2PAK

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs140mOhm @ 8.5A, 5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C18.5A (Ta)
Max Power Dissipation88W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK

Environmental

Operating Temperature-55°C~175°C(TJ)