NTB30N20

onsemi

NTB30N20

Datasheet

Analog & Power

MOSFET N-CH 200V 30A D2PAK

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs81mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2335 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Max Power Dissipation2W (Ta), 214W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK

Environmental

Operating Temperature-55°C~175°C(TJ)