NTB25P06

onsemi

NTB25P06

Datasheet

Analog & Power

MOSFET P-CH 60V 27.5A D2PAK

ObsoleteTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs82mOhm @ 25A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C27.5A (Ta)
Max Power Dissipation120W (Tj)

Mechanical

PackageTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)