NTB095N65S3HF

onsemi

NTB095N65S3HF

Datasheet

Analog & Power

MOSFET N-CH 650V 36A D2PAK-3

DiscontinuedTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs95mOhm @ 18A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2930 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesFRFET®, SuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 860µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation272W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK-3 (TO-263-3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)