NIF9N05CLT3

onsemi

NIF9N05CLT3

Datasheet

Analog & Power

MOSFET N-CH 52V 2.6A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs125mOhm @ 2.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 35 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2.5V @ 100µA

Electrical

Drain-to-Source Voltage52 V
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Max Power Dissipation1.69W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)