NDT456P

onsemi

NDT456P

Analog & Power

P-CHANNEL ENHANCEMENT MODE FIELD

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 7.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageBulk
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

Environmental

Operating Temperature-65°C~150°C(TJ)