NDT01N60T1G

onsemi

NDT01N60T1G

Datasheet

Analog & Power

MOSFET N-CH 600V 400MA SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.5Ohm @ 200mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.7V @ 50µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Max Power Dissipation2.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)