NDS351N

onsemi

NDS351N

Datasheet

Analog & Power

MOSFET N-CH 30V 1.1A SUPERSOT3

ObsoleteTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C~150°C(TJ)