NDD60N745U1-35G

onsemi

NDD60N745U1-35G

Analog & Power

MOSFET N-CH 600V 6.6A IPAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs745mOhm @ 3.25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 50 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Max Power Dissipation84W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C~150°C(TJ)